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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC4368 description collector-emitter breakdown voltage : v ceo = 150v(min) complement to type 2sa1657 applications designed for tv, monitor vert ical output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5.0 v i c collector current-continuous 1.5 a i b b base current-continuous 0.5 a collector power dissipation @t c = 25 20 p c collector power dissipation @t a = 25 2 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4368 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma; i b = 0 150 v v ce (sat) collector-emitter saturation voltage i c = 500ma; i b = 50ma 1.5 v i cbo collector cutoff current v cb = 120v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe dc current gain i c = 500ma; v ce = 10v 40 140 c ob collector output capacitance i e = 0; v cb = 10v; f= 1.0mhz 35 pf f t current-gain?bandwidth product i c = 500m a; v ce = 10v 4 mhz isc website www.iscsemi.cn 2 www.iscsemi.cn |
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